Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy

High-quality InP nanoneedles grown on silicon

Articles you may be interested in High-quality 1.3 m-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates Appl. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition Appl. High detectivit...

Structure of ordered and disordered InxGa1 xP(001) surfaces prepared by metalorganic vapor phase epitaxy

Ordered and disordered InGaP(001) films were grown by metalorganic vapor-phase epitaxy and studied by low energy electron diffraction, reflectance difference spectroscopy, and X-ray photoemission spectroscopy. Both alloy surfaces were covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms were terminated with hydrogen. Ordered InGaP(001) appeared indium rich, ...

Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices

We have investigated the properties of strain-compensated InGaAsP/InGaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP barrier. Using cross-sectional scanning tunneling microscopy and spectroscopy, we observe lateral variations in layer thickness and electronic properties. When the number of superlattice periods is increased from...

Optical and electrical quality of InGaP grown on GaAs with low pressure metalorganic chemical vapour deposition

Hydride Vapor Phase Epitaxial Growth of Thick GaN Layers with Improved Surface Flatness

Thick GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on different GaN templates grown by metalorganic vapor phase epitaxy. Crack formation could be reduced by using a hydrogen/nitrogen carrier gas mixture. By carefully optimizing the growth conditions in the final stage of the process, excellent surface morphologies could be obtained at still acceptably high growth rates. Up t...